Electrodeposition of hybrid thin film phthalocyanine zinc oxide / copper tetrasulfonation for color sensitive solar cell applications

Electrodeposition of hybrid thin film phthalocyanine zinc oxide / copper tetrasulfonation for color sensitive solar cell applications

Research methodology:
In this journal we discuss a constant-current electrodeposition method. Hybrid zinc oxide (ZnO) and phthalocyanine copper tetrasulfonation (TSPcCu) films were grown in indium tin oxide (ITO) glass with one step cathodic electrodeposition from a mixture of Zn (NO2) 3, TSPcCu and KCl. The addition of TSPcCu greatly affects the morphology and crystallographic orientation of ZnO. The device for the development of dye-sensitized solar cells (DSSC) was assembled to investigate the properties of photovoltaic materials. Then Photoelectrochemical analysis was done to see how much power conversion efficiency was compared to the devices of dye-sensitized solar cells (DSSC) without TSPcCu.
Results obtained:
The constant electrodeposition method is shown to easily obtain a uniform ZnO / TSPcCu hybrid film. Piles of nanosheets from ZnO crystals spontaneously form a beneficial porous structure to further absorb organic dyes. XRD analysis of the deposited film revealed that the adsorption of the dye molecule could change the orientation of the ZnO crystallite. The device for the development of dye-sensitized solar cells (DSSC) was assembled to investigate the properties of photovoltaic materials, namely ZnO and ZnO / TSPcCu hybrid films. It was found that ZnO / TSPcCu-based DSSC showed a threefold increase in energy conversion efficiency compared to the only DSSC-based ZnO. DSSCs based on ZnO / TSPcCu fi lmms show open circuit voltage 0.308 V, short circuit current 90 μA cm-2, factor fi lter 0.26, and power conversion efficiency 0.14%.
Then on photoelectrochemical measurements carried out on both film electrodes based on ZnO / TSPcCu and the only ZnO, indicating that TSPcCu plays an important role in improving photoelectric performance. TSPcCu can increase incident photon absorption, which leads to fast charge transfer and effective limitation of interface recombination.

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